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Dopant Segregation and Nickel Stanogermanide Contact Formation on p⁺Ge_0.947Sn_0.053 Source/DrainGENQUAN HAN; SHAOJIAN SU; BUWEN CHENG et al.IEEE electron device letters. 2012, Vol 33, Num 5, pp 634-636, issn 0741-3106, 3 p.Article

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Control of strain relaxation behavior of Ge_1―xSn_x buffer layersSHIMURA, Yosuke; TAKEUCHI, Shotaro; NAKATSUKA, Osamu et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 84-88, issn 0038-1101, 5 p.Conference Paper

Strained germanium―tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationLANXIANG WANG; SHAOJIAN SU; YEO, Yee-Chia et al.Solid-state electronics. 2013, Vol 83, pp 66-70, issn 0038-1101, 5 p.Conference Paper

Band structure calculation of GeSn and SiSnAMRANE, N; AIT ABDERRAHMANE, S; AOURAG, H et al.Infrared physics & technology. 1995, Vol 36, Num 5, pp 843-848, issn 1350-4495Article

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In search of high performance anode materials for Mg batteries: Computational studies of Mg in Ge, Si, and SnMALYI, Oleksandr I; TAN, Teck L; MANZHOS, Sergei et al.Journal of power sources. 2013, Vol 233, pp 341-345, issn 0378-7753, 5 p.Article

Germanium―Tin n⁺/p Junction Formed Using Phosphorus Ion Implant and 400 °C Rapid Thermal AnnealLANXIANG WANG; SHAOJIAN SU; BUWEN CHENG et al.IEEE electron device letters. 2012, Vol 33, Num 11, pp 1529-1531, issn 0741-3106, 3 p.Article

Improvement of hydrogen storage characteristics of Mg/Mg₂Ni by alloying: Beneficial effect of InCERMAK, J; KRAL, L.Journal of power sources (Print). 2012, Vol 214, pp 208-215, issn 0378-7753, 8 p.Article

The SiGeSn approach towards Si-based lasersSUN, G; YU, S.-Q.Solid-state electronics. 2013, Vol 83, pp 76-81, issn 0038-1101, 6 p.Conference Paper

Alloying of Mg/Mg₂Ni eutectic by chosen non-hydride forming elements: Relation between segregation of the third element and hydride storage capacityCERMAK, J; KRAL, L.Journal of power sources (Print). 2012, Vol 197, pp 116-120, issn 0378-7753, 5 p.Article

Optical constants and interband transitions of Ge_1-xSn_x alloys (x<0.2) grown on Si by UHV-CVDCOOK, Candi S; ZOLLNER, Stefan; BAUER, Matthew R et al.Thin solid films. 2004, Vol 455-56, pp 217-221, issn 0040-6090, 5 p.Conference Paper

Hole Mobility Enhancement in Compressively Strained Ge_0.93Sn_0.07 pMOSFETsSUYOG GUPTA; HUANG, Yi-Chiau; YIHWAN KIM et al.IEEE electron device letters. 2013, Vol 34, Num 7, pp 831-833, issn 0741-3106, 3 p.Article

Germanium―Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 °C Si₂H₆ PassivationXIAO GONG; GENQUAN HAN; BUWEN CHENG et al.IEEE electron device letters. 2013, Vol 34, Num 3, pp 339-341, issn 0741-3106, 3 p.Article

Formation of Ni(Ge_1―xSn_x) layers with solid-phase reaction in Ni/Ge_1―xSn_x/Ge systemsNISHIMURA, Tsuyoshi; NAKATSUKA, Osamu; SHIMURAA, Yosuke et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 46-52, issn 0038-1101, 7 p.Conference Paper

First-principles calculations of structural, electronic and optical properties of BaGaXH (X=Si, Ge, Sn)CHIHI, T; GHEBOULI, M. A; GHEBOULI, B et al.Materials science in semiconductor processing. 2013, Vol 16, Num 6, pp 1558-1565, issn 1369-8001, 8 p.Article

Study of Dielectric Properties of Oxygen-Postannealed Cu_0.5Tl_0.5Ba₂Ca₂(Cu_3-yM_y)O_10-δ SuperconductorMUMTAZ, M; KHAN, Nawazish A; KHAN, Sajid et al.IEEE transactions on applied superconductivity. 2013, Vol 23, Num 2, issn 1051-8223, 8800108.1-88001088.8Article

Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology DemonstrationYUE YANG; GENQUAN HAN; PENGFEI GUO et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 12, pp 4048-4056, issn 0018-9383, 9 p.Article

First principles study of the structural, electronic, optical, elastic and thermodynamic properties of CdXAs₂ (X=Si, Ge and Sn)SHARMA, Sheetal; VERMA, A. S; BHANDARI, R et al.Materials science in semiconductor processing. 2014, Vol 27, pp 79-96, issn 1369-8001, 18 p.Article

Development of Sn-Zn lead-free solders bearing alloying elementsLIANG ZHANG; XUE, Song-Bai; GAO, Li-Li et al.Journal of materials science. Materials in electronics. 2010, Vol 21, Num 1, pp 1-15, issn 0957-4522, 15 p.Article

Ge_1―xSn_x stressors for strained-Ge CMOSTAKEUCHI, S; SHIMURA, Y; LOO, R et al.Solid-state electronics. 2011, Vol 60, Num 1, pp 53-57, issn 0038-1101, 5 p.Conference Paper

Molecular approaches to p- and n-nanoscale doping of Ge_1-ySn_y semiconductors: Structural, electrical and transport propertiesJUNQI XIE; TOLLE, J; D'COSTA, V. R et al.Solid-state electronics. 2009, Vol 53, Num 8, pp 816-823, issn 0038-1101, 8 p.Conference Paper

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsVINCENT, B; SHIMURA, Y; ZAIMA, S et al.Microelectronic engineering. 2011, Vol 88, Num 4, pp 342-346, issn 0167-9317, 5 p.Conference Paper

Impact of isovalent defect engineering strategies on carbon-related clusters in siliconLONDOS, C. A; SGOUROU, E. N; CHRONEOS, A et al.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 5, pp 1696-1701, issn 0957-4522, 6 p.Article